IRF530 datasheet、Irf560、Ifr530在PTT/mobile01評價與討論，在ptt社群跟網路上大家這樣說
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IRF530 datasheet在IRF530 Power MOSFET - Vishay的討論與評價
IRF530 www.vishay.com. Vishay Siliconix. S21-0819-Rev. C, 02-Aug-2021 ... Please see the information / tables in this datasheet for details. DESCRIPTION.
IRF530 datasheet在IRF530 Datasheet (PDF) - onsemi的討論與評價
Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. Page 7. IRF530 http://onsemi.com. 6.
IRF530 datasheet在IRF530 STMicroelectronics | Mouser 臺灣的討論與評價
IRF530 STMicroelectronics MOSFET N-Ch 100 Volt 16 Amp 資料表、庫存和定價。 ... STMicroelectronics IRF530 放大圖片 ... IRF530 規格書(PDF). ECAD模型:.
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IRF530 datasheet在IRF530 Datasheet, Equivalent, Power MOSFET.的討論與評價
160 Ohm, N-Channel Power MOSFE Ts These are N-Channel enhancement mode silicon gate power field effect trans istors. They are advanced power MOSFETs designed, ...
IRF530 datasheet在IRF530 Datasheet, PDF - ALLDATASHEET.COM的討論與評價
IRF530 Datasheet N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR - Motorola, Inc N−Channel Enhancement−Mode Silicon Gate, ...
IRF530 datasheet在IRF530 MOSFET. Datasheet pdf. Equivalent的討論與評價
IRF530 Transistor Datasheet, IRF530 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.
IRF530 datasheet在IRF530 N-Channel MOSFET的討論與評價
IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current ...
IRF530 datasheet在IRF530NSPbF IRF530NLPbF - Infineon Technologies的討論與評價
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onr.
IRF530 datasheet在IRF530的討論與評價
IRF530. Electrical Characteristics @ Tj = 25°C (unless otherwise specified). Parameter. V(BR)DSS Drain-to-Source Breakdown Voltage.
IRF530 datasheet在IRF530的討論與評價
IRF530. NOTE: When ordering, use the entire part number. G. D. S. GATE. DRAIN (FLANGE). SOURCE. DRAIN. Data Sheet. February 2002. [ /Title.